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HY51VS18163HGJ-6 specifiche: Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
HY51VS18163HGJ-6 simili
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGJ-6 datasheet e spec
Fabbricante : HYNIX
Viaggi : SOJ
Pins : 42
Temperatura : Min 0 °C | Max 70 °C
Dimensione : 117 KB
Applicazione : Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
HY51VS18163HGJ-6 PDF Download