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IRFB18N50K specifiche: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
IRFB18N50K simili
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- IRFB18N50K
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IRFB18N50K datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 91 KB
Applicazione : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
IRFB18N50K PDF Download