| Parte n. | Fabbricante | Applicazione |
|---|
| SMAJ40CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. Bidirectional. |
| SMAJ40A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. |
| 3EZ30D10 | JGD | 3 W, silicon zener diode. Nominal voltage 30 V, current 25 mA, +-10% tolerance. |
| 1N4126D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 51V. 1% tolerance. |
| W08M | JGD | Single phase silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.5 A. |
| FR156 | JGD | 1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| BZX84C10 | JGD | 350mW zener diode, 10V |
| 1N5522B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-5% tolerance. |
| 1N957B | JGD | 0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-5% tolerance. |
| 1N5943A | JGD | 1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance. |
| BZX84C15 | JGD | 350mW zener diode, 15V |
| 1N5523B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
| 1EZ190D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 190V at 1.3mA. |
| P6KE68C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional. |
| SMBJ5955D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance. |
| 1N5920C | JGD | 1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-2% tolerance. |
| FR307 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| KBP200 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| SMBJ130C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 144 V (min), 176 V (max). Test current 1.0 mA. Bidirectional. |
| MMBZ5231B | JGD | Surface mount zener diode. Nominal zener voltage 5.1V, test current 20.0mA. |
| 3EZ13D2 | JGD | 3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-2% tolerance. |
| 3EZ4.7D3 | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-3% tolerance. |
| 1N5947 | JGD | 1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-20% tolerance. |
| ZMM55-A43 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 40-46 V. Test current 2.5 mA. +-1% tolerance. |
| KBPC1010G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| 3EZ190D1 | JGD | 3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-1% tolerance. |
| 1N5922D | JGD | 1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-1% tolerance. |
| SMBJ58CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 64.4 V (min), 71.2 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ7.5D3 | JGD | 3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-3% tolerance. |
| KBPC300G | JGD | Single phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
