| Parte n. | Fabbricante | Applicazione |
|---|
| SMBJ150 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 167 V (min), 204 V (max). Test current 1.0 mA. |
| 1W08G | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800 V. |
| KBPC1010 | JGD | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5543D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-1% tolerance. |
| HER203 | JGD | 2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ100A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. |
| ZMM5227C | JGD | Surface mount zener diode. Nominal zener voltage 3.6 V. Test current 20 mA. +-10% tolerance. |
| FR606 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 3EZ20D3 | JGD | 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-3% tolerance. |
| P4KE91 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. |
| IN5401 | JGD | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
| SF12LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A. |
| SMBJ48CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 53.3 V (min), 58.9 V (max). Test current 1.0 mA. Bidirectional. |
| SMAJ43C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V. Bidirectional. |
| R1800F | JGD | High voltage fsat recovery rectifier. Max recurrent peak reverse voltage 1800 V. Max average forward rectified current 0.5A. |
| SMBJ90CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 100 V (min), 111 V (max). Test current 1.0 mA. Bidirectional. |
| 3EZ150D | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-20% tolerance. |
| S1A | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A. |
| SMBJ6.0C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 6.67 V (min), 8.15 V (max). Test current 10.0 mA. Bidirectional. |
| 1N5540C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| HER306G | JGD | 3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| ZMM5251D | JGD | Surface mount zener diode. Nominal zener voltage 22 V. Test current 5.6 mA. +-20% tolerance. |
| 1N5528 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-20% tolerance. |
| SMAJ7.5A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.5 V. |
| ZMM55-C5V6 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-5% tolerance. |
| FR602 | JGD | 6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ30 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 33.3 V (min), 40.7 V (max). Test current 1.0 mA. |
| 1N4758D | JGD | 1W zener diode. Nominal zener voltage 56V. 1% tolerance. |
| P4KE33C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. Bidirectional. |
| 1N5926C | JGD | 1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-2% tolerance. |
