| Parte n. | Fabbricante | Applicazione |
|---|
| SR510 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 5.0 A. |
| P4KE220CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V. Bidirectional. |
| HER606 | JGD | 6.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 600V. |
| FR602G | JGD | 6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ40 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 44.4 V (min), 54.3 V (max). Test current 1.0 mA. |
| KBPC1008 | JGD | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V. |
| 1N4619 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.0V. |
| ZMM55-C12 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 11.4-12.7 V. Test current 5 mA. +-5% tolerance. |
| 1N5944A | JGD | 1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance. |
| 1N5923A | JGD | 1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-10% tolerance. |
| BY550-100 | JGD | 5.0 A silicon rectifier. Max recurrent peak reverse voltage 100 V. |
| 3EZ12D | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-20% tolerance. |
| SMAJ51A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. |
| 1N5923C | JGD | 1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-2% tolerance. |
| SMAJ70CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V. Bidirectional. |
| SMAJ45CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V. Bidirectional. |
| HER154G | JGD | 1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V. |
| SMBJ7.5CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.33 V (min), 9.21 V (max). Test current 1.0 mA. Bidirectional. |
| 1N965A | JGD | 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-10% tolerance. |
| P4KE6.8CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. Bidirectional. |
| 3EZ150D3 | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-3% tolerance. |
| P6KE43 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. |
| P4KE200 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. |
| P4KE7.5CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 7.5 V. Bidirectional. |
| SMBJ5918 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-20% tolerance. |
| SMBJ5947C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 82 V. Test current 4.6 mA. +-2% tolerance. |
| FR105L | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600V. |
| SMBJ8.0A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 8.89 V (min), 9.83 V (max). Test current 1.0 mA. |
| 3EZ47D10 | JGD | 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-10% tolerance. |
| SFR153 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.5 A. |
