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NTE5570 specifiche: Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A.

NTE5570 simili

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NTE5570 datasheet e spec

Fabbricante : NTE Electronic 

Viaggi :  

Pins : 4 

Temperatura : Min -40 °C | Max 125 °C

Dimensione : 23 KB

Applicazione : Silicon controlled rectiifier for phase control applications. Repetitive peak voltage, Vrrm = 200V. Non - repetitive peak reverse blocking voltage, Vrsm = 500V. RMS on-state current, Itrms = 125A. 

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