F1410 specifiche: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 simili

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 6

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 39 KB

Applicazione : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor