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LB401 specifiche: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 simili
- LB401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 datasheet e spec
Fabbricante : Polyfet RF
Viaggi :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 41 KB
Applicazione : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 PDF Download