SH702 specifiche: 90 Watt, silicon gate enhancement mode RF power VDMOS transistor

SH702 simili

SH702 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 39 KB

Applicazione : 90 Watt, silicon gate enhancement mode RF power VDMOS transistor