2SD600 specifiche: NPN epitaxial planar silicon transistor, 100V/1A low frequency power amp application

2SD600 simili

2SD600
- NPN epitaxial planar silicon transistor, 100V/1A low frequency power amp application
2SD600K
- NPN epitaxial planar silicon transistor, 120V/1A low frequency power amp application
2SD612
- NPN epitaxial planar silicon transistor, 25V/2A low frequency power amp application
2SD612K
- NPN epitaxial planar silicon transistor, 35V/2A low frequency power amp application
2SD613
- NPN epitaxial planar silicon transistor, 85V/6A, AF 25 to 35W output application

2SD600 datasheet e spec

Fabbricante : SANYO

Viaggi : 2009B

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 116 KB

Applicazione : NPN epitaxial planar silicon transistor, 100V/1A low frequency power amp application