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BU406D specifiche: NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.

BU406D simili

  • BU406
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
  • BU406D
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
  • BU406H
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
  • BU407
    • Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
  • BU408
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.

BU406D datasheet e spec

Fabbricante : WingShing 

Viaggi : TO-220 

Pins : 3 

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 24 KB

Applicazione : NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V. 

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