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04 BU406D BU406 WS628512LLST KBPC3510 2SC5416LS BDX54B LM393M 2SA940 KA2411 MJ15015 BDX54B LM393M P600A 2SC2233 TIP42B 2N3771 2SA1105 BDX53A FR106 2SD1650 MELFSMA5817 2SD313 2SA1492 2SD1433 KA3842AM 2SD1710 LM317LZ

WingShing Schede di catalogo-1

Parte n.FabbricanteApplicazione
2SD850 WingShingSilicon diffused power transistor.
2SC1172 WingShingNPN triple diffused planar silicon transistor. Color TV horizontal output applications (no dapmer diode)
2SA1104 WingShingSilicon epitaxial planar transistor.
BU406D WingShingNPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
BU406 WingShingNPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
WS628512LLST WingShingVery low power/volpage CMOS SRAM. 512K x 8 bit. Vcc 2.4V-3.6V. Speed 70ns
KBPC3510 WingShingSingle-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS bridge input voltage 700V. Maximum DC blocking voltage 1000V
2SC5416LS WingShingNPN silicon transistor. High voltage power switching applications
BDX54B WingShingPNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
LM393M WingShingDual differential comparator
2SA940 WingShingPNP epitaxial silicon transistor. Power amplifier vertical deflection output.
KA2411 WingShingTelephone tone ringer. Adjustable for reduced supply initiation current
MJ15015 WingShingSilicon epitaxial planar transistor.
BDX54B WingShingPNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
LM393M WingShingDual differential comparator
P600A WingShingSilicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS voltage 35V. Maximum DC blocking voltage 50V
2SC2233 WingShingNPN epitaxial silicon transistor. Low frequency power amplifier
TIP42B WingShingPNP epitaxial silicon transistor. Medium power linear and switching applications Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
2N3771 WingShingNPN planar silicon transistor. Audio power amplifier DC to DC converter
2SA1105 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
BDX53A WingShingNPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
FR106 WingShingFast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V.
2SD1650 WingShingSilicin diffused power transistor. Horizontal deflection circuits of color TV receivers
MELFSMA5817 WingShingSurface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V
2SD313 WingShingNPN epitaxial silicon transistor. Low frequency power amplifier
2SA1492 WingShingPNP planar silicon transistor. Audio power amplifier DC to DC converter.
2SD1433 WingShingNPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode)
KA3842AM WingShingLinear integrated circuit
2SD1710 WingShingSilicon diffused power transistor. Horizontal deflection circuits of color TV receivers
LM317LZ WingShing3-terminal adjustable regulator. Output voltage 1.2V to 27V.

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