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01B P1445 L7892-31 P5274 C7169 E989-10 C6080-03 C7300-10-12NRP F2224-31 PLP10-130C PLP10-041 L5586 H7710-15 R5983P L2423 E989-15 G4176-01 C7300-10-12NPD R955 L7892-32 G6126 L8347-31 C4877-02 G7881-22 G9202-512R L6286 C4878 P2405

Hamamatsu Schede di catalogo-16

Parte n.FabbricanteApplicazione
L8933-61 Hamamatsu0.6-2.2W; 2V; CW laser diode high optical power from a single chip
G7150-16 HamamatsuActive area 0.45x1mm; spectral response range0.9-1.7um; reverse voltage5V; InGaAs PIN photodiode array 16-element array. For near infrared (NIR) spectrophotometer
P201B HamamatsuSupply voltage200Vdc; 100mW; CdS photoconductive cell hermetically sealed for high reliability
P1445 Hamamatsu100Vdc; 30mW; CdS photoconductive cell standard type designed for general purpose, wide application
L7892-31 HamamatsuConnector typeSC ;2V; 0.3mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
P5274 HamamatsuAllowable current40mA; MCT photoconductive detector dewar type detector with high sensitivity and high-speed response in long wavelength range
C7169 HamamatsuOutput voltage +-15V; input current0.3/0.2mA; power supply for PMT mudule
E989-10 HamamatsuMagnetic shield case
C6080-03 HamamatsuPUV power meter. A wide lineup of 248nm, 365nm and 436nm type
C7300-10-12NRP Hamamatsu12-bit; MAX 250Hz readout (1280x16); 1.3 Mpixels; high performance digital CCD camera
F2224-31 HamamatsuCircular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics
PLP10-130C HamamatsuHigh-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm
PLP10-041 HamamatsuHigh-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm
L5586 HamamatsuForward current50mA; 5V; 80mW; infrared subminiature LED. For cameras, optical switches and encoders
H7710-15 HamamatsuInput voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module
R5983P HamamatsuSpectral responce185-710nm; between anode and cathode1250Vdc; 0.1mA; photomultiplier tube
L2423 Hamamatsu200W; super-quiet mercury-xenon lamp deep UV light source for precision measurement
E989-15 HamamatsuMagnetic shield case
G4176-01 HamamatsuMAx Bias volatge +-10V; pulesd light 50mW; ultrafast MSM photodetectors. For optical high-speed waveform measurements, optical communications
C7300-10-12NPD Hamamatsu12-bit; MAX 250Hz readout (1280x16); 1.3 Mpixels; high performance digital CCD camera
R955 HamamatsuSpectral responce185-900nm; between anode and cathode1500Vdc; 0.1mA; photomultiplier tube
L7892-32 HamamatsuConnector typeFC ;2V; 0.3mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
G6126 HamamatsuActive area size5mm; rated input voltage+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection
L8347-31 HamamatsuConnector typeSC ;2V; 0.1mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH
C4877-02 HamamatsuInput voltage230V +-23V(50Hz/60Hz); outputV 28V; output current 4.3A; high performance electronic cooler
G7881-22 HamamatsuSupply voltage0.3-5.5V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH
G9202-512R HamamatsuNumber of pixels512; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear image sensor for DWDM wavelength monitor and optical spectrum analyzer
L6286 HamamatsuForward current50mA; 5V; 80mW; infrared subminiature LED. For cameras, optical switches and encoders
C4878 HamamatsuInput voltage100V +-10V(50Hz/60Hz); outputV 28V; output current 4.3A; high performance electronic cooler
P2405 HamamatsuSupply voltage100Vdc; 50mW; CdS photoconductive cell resin coating - dual type. Low cost dual-element sensor with standard size. For sensor for various control device

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