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GM71C17800CLT-6 specifiche: CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power
GM71C17800CLT-6 simili
- GM71C17400CJ-7
- 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
- GM71C17400CLJ-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power
- GM71C17400CLJ-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CLJ-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CLJ-7
- 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power
- GM71C17400CLT-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power
- GM71C17400CLT-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CT-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
GM71C17800CLT-6 datasheet e spec
Fabbricante : HYNIX
Viaggi : TSOP II
Pins : 28
Temperatura : Min 0 °C | Max 70 °C
Dimensione : 101 KB
Applicazione : CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power
GM71C17800CLT-6 PDF Download