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GM71VS17403CLT-6 specifiche: CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power
GM71VS17403CLT-6 simili
- GM71C17400CJ-7
- 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
- GM71C17400CLJ-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power
- GM71C17400CLJ-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CLJ-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CLJ-7
- 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power
- GM71C17400CLT-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power
- GM71C17400CLT-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CT-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
GM71VS17403CLT-6 datasheet e spec
Fabbricante : HYNIX
Viaggi : TSOP II
Pins : 24
Temperatura : Min 0 °C | Max 70 °C
Dimensione : 108 KB
Applicazione : CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power
GM71VS17403CLT-6 PDF Download