| Parte n. | Fabbricante | Applicazione |
|---|
| SMAJ26CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. Bidirectional. |
| BZX84C33 | JGD | 350mW zener diode, 33V |
| SMBJ48A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 53.3 V (min), 58.9 V (max). Test current 1.0 mA. |
| P4KE12A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. |
| ZMM55-C6V2 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-5% tolerance. |
| 2W04G | JGD | Single phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400 V. |
| 1N971 | JGD | 0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-20% tolerance. |
| 1N5916C | JGD | 1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-2% tolerance. |
| KBPC1008G | JGD | Single phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V. |
| SMAJ13 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V. |
| SMBJ5942B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-5% tolerance. |
| MMBZ5249B | JGD | Surface mount zener diode. Nominal zener voltage 19.0V, test current 6.6mA. |
| 3EZ30D | JGD | 3 W, silicon zener diode. Nominal voltage 30 V, current 25 mA, +-20% tolerance. |
| MUR140 | JGD | 1.0A ultra fast rectifier. Max recurrent peak reverse voltage 400V. |
| SMBJ5920B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-5% tolerance. |
| ES1B | JGD | 1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 100 V. |
| 1N4003G | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. |
| 1N750C | JGD | 500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-2% tolerance. |
| 1N4734 | JGD | 1W zener diode. Nominal zener voltage 5.6V. 10% tolerance. |
| SMAJ26A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. |
| P4KE100CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional. |
| KBP200G | JGD | Single-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
| P6KE22 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. |
| KBU800 | JGD | Single phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5937D | JGD | 1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-1% tolerance. |
| ZMM5241A | JGD | Surface mount zener diode. Nominal zener voltage 11 V. Test current 20 mA. +-3% tolerance. |
| 1N5526C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-2% tolerance. |
| 3EZ17D1 | JGD | 3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-1% tolerance. |
| SMBJ5919C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-2% tolerance. |
| SMAJ10A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. |
