| Parte n. | Fabbricante | Applicazione |
|---|
| 1N4101C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. 2% tolerance. |
| 1N5934C | JGD | 1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-2% tolerance. |
| 3EZ180D5 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-5% tolerance. |
| BZX84C3V6 | JGD | 350mW zener diode, 3.6V |
| SMAJ12CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V. Bidirectional. |
| 1N4764 | JGD | 1W zener diode. Nominal zener voltage 100V. 10% tolerance. |
| S2J | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.5 A. |
| ZMM55-A24 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 22.8-25.6 V. Test current 5 mA. +-1% tolerance. |
| SF24G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 2.0 A. |
| 1N4132C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 82V. 2% tolerance. |
| SMAJ85CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 85 V. Bidirectional. |
| KBP102G | JGD | Single-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
| 1N5913C | JGD | 1.5 W, silicon zener diode. Zener voltage 3.3V. Test current 113.6 mA. +-2% tolerance. |
| SMBJ5946 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
| 3EZ20D | JGD | 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-20% tolerance. |
| 3EZ27D4 | JGD | 3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-4% tolerance. |
| BY296 | JGD | 2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| 1N4003L | JGD | 1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V. |
| SMBJ54C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 60.0 V (min), 73.3 V (max). Test current 1.0 mA. Bidirectional. |
| SMBJ5954A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
| 6A1G | JGD | 6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 100 V. |
| P4KE68 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. |
| 1N976C | JGD | 0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-2% tolerance. |
| MMBZ5251B | JGD | Surface mount zener diode. Nominal zener voltage 22.0V, test current 5.6mA. |
| 1N4615C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 2.0V. 2% tolerance. |
| BY254 | JGD | 3.0 A silicon rectifier. Max recurrent peak reverse voltage 800 V. |
| 1EZ170D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 170V at 1.5mA. |
| 1N4747C | JGD | 1W zener diode. Nominal zener voltage 20V. 2% tolerance. |
| W04MG | JGD | Miniature single phase glass passivated bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.5 A. |
| IN4946 | JGD | 1.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
