| Parte n. | Fabbricante | Applicazione |
|---|
| SA100 | MDE Semiconductor | 100.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P4KE11A | MDE Semiconductor | 9.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP70 | MDE Semiconductor | 70V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ160 | MDE Semiconductor | 160.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ28 | MDE Semiconductor | 28.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP100A | MDE Semiconductor | 100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 20KW20A | MDE Semiconductor | 20.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-10D330K | MDE Semiconductor | 33V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
| SMAJ100A | MDE Semiconductor | 100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KW28 | MDE Semiconductor | 28.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-7D390M | MDE Semiconductor | 39V; max peak current500A; metal oxide varistor. Standard D series 7mm disc |
| SMCJ13 | MDE Semiconductor | 13.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE6.8 | MDE Semiconductor | 5.50V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| LCE22A | MDE Semiconductor | 22.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| P6KE16A | MDE Semiconductor | 12.90V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE440 | MDE Semiconductor | 356.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-14D331K | MDE Semiconductor | 330V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| 1.5KE18 | MDE Semiconductor | 13.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMBJ9.0 | MDE Semiconductor | 9.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 5KP90 | MDE Semiconductor | 90.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMAJ110A | MDE Semiconductor | 110.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX-200 | MDE Semiconductor | 181.8V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
| SA20 | MDE Semiconductor | 20.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-6.0CA | MDE Semiconductor | 6.00V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-32D112K | MDE Semiconductor | 1100V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| SMDJ70A | MDE Semiconductor | 70.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE18A | MDE Semiconductor | 14.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3T260B | MDE Semiconductor | 220V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| SAC7.0 | MDE Semiconductor | 7.00V; 38.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| P4KE47A | MDE Semiconductor | 40.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
