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1EB3 RD33MW UPC2726T-E3 RD10ESAB2 RD36JS-T4 UPC4250G2 RD7.5EB3 NE76100 RD39E-T4 2SD596-L 2SD1006-T1 RD27ESAB4 UPC8130TA 2SK1593-T2 NNCD5.6MG-T2 PS7360-1A NNCD4.3F 2SK3432-Z SF139E-1 EA2-24NU EC2-5T 2SK1959-T1 UB2-5SNU-R UPD178016AGC-XX-3B9-OP UPD65644 UPD65631 UPC1093J-1(HS) RD5.
Parte n. | Fabbricante | Applicazione |
---|---|---|
UPC8139GR-7JH-E1 | NEC | PHS application, reception IF in one chip |
RD11EB3 | NEC | 0.5W DHD zener diode, 11V |
RD33MW | NEC | 200mW Dual type Zener Diode(SC-59) |
UPC2726T-E3 | NEC | General-purpose differential type wideband amplifier |
RD10ESAB2 | NEC | 0.4W DHD zener diode, 10V |
RD36JS-T4 | NEC | Zener diode |
UPC4250G2 | NEC | Single operational amplifier |
RD7.5EB3 | NEC | 0.5W DHD zener diode, 7.5V |
NE76100 | NEC | MES type field effect transistor |
RD39E-T4 | NEC | 500mW Zener diode |
2SD596-L | NEC | Silicon transistor |
2SD1006-T1 | NEC | Silicon transistor |
RD27ESAB4 | NEC | 0.4W DHD zener diode, 27V |
UPC8130TA | NEC | Mobile communication low-distorition gain variable amplifier IC |
2SK1593-T2 | NEC | N-channel MOS FET |
NNCD5.6MG-T2 | NEC | Noise clipping diode for ESD protection |
PS7360-1A | NEC | 600V, 90mA, High dielectric strength voltage |
NNCD4.3F | NEC | Zener diode ESD, surge protection |
2SK3432-Z | NEC | Nch power MOS FET |
SF139E-1 | NEC | Organic thermal sensitive pellet type,10A rated current |
EA2-24NU | NEC | Open and shut a circuit for small signal. |
EC2-5T | NEC | Open and shut a circuit for small signal. |
2SK1959-T1 | NEC | N Channel enhancement MOS FET |
UB2-5SNU-R | NEC | Open and shut a circuit for small signal |
UPD178016AGC-XX-3B9-OP | NEC | 8-bit DTS controller |
UPD65644 | NEC | CMOS gate arrays |
UPD65631 | NEC | CMOS gate arrays |
UPC1093J-1(HS) | NEC | Variable shunt regulator |
RD5.6FB2 | NEC | 1W zener diode, 5.6V |
RD24EB1 | NEC | 0.5W DHD zener diode, 24V |