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AS4LC8M8S0-8TC specifiche: 3.3V 8M x 8 CMOS synchronous DRAM, 1/frequency - 8 ns
AS4LC8M8S0-8TC simili
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC8M8S0-8TC datasheet e spec
Fabbricante : Alliance
Viaggi : TSOPII
Pins : 54
Temperatura : Min 0 °C | Max 70 °C
Dimensione : 417 KB
Applicazione : 3.3V 8M x 8 CMOS synchronous DRAM, 1/frequency - 8 ns
AS4LC8M8S0-8TC PDF Download