BAS70H-06 specifiche: 70V; 200mA silicon schottky barrier diode. PN junction guard ring for transient and ESD protection

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BAS70H-06 datasheet e spec

Fabbricante : Diodes

Viaggi : SOT-23

Pins : 3

Temperatura : Min -55 °C | Max 125 °C

Dimensione : 65 KB

Applicazione : 70V; 200mA silicon schottky barrier diode. PN junction guard ring for transient and ESD protection