CTA2N1P-7 specifiche: 60V; 150mW complex transistor array. Guard ring construction for transient protection

CTA2N1P-7 simili

CTA2N1P-7
- 60V; 150mW complex transistor array. Guard ring construction for transient protection
CTA2P1N-7
- 40V; 150mW complex transistor array

CTA2N1P-7 datasheet e spec

Fabbricante : Diodes

Viaggi : SOT-363

Pins : 6

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 67 KB

Applicazione : 60V; 150mW complex transistor array. Guard ring construction for transient protection