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TB1100M specifiche: 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M simili
- TB1100H
- 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100L
- 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100M
- 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M datasheet e spec
Fabbricante : Diodes
Viaggi : SMB
Pins : 2
Temperatura : Min -40 °C | Max 150 °C
Dimensione : 205 KB
Applicazione : 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M PDF Download