EC-10N20 specifiche: N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.

EC-10N20 simili

EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10P20
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10N16
- N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10P16
- P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.

EC-10N20 datasheet e spec

Fabbricante : EXICON

Viaggi : TO3P

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 249 KB

Applicazione : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.