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ECF10N25 simili

  • ECF10N25
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.
  • ECF10P25
    • P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.

ECF10N25 datasheet e spec

Fabbricante : EXICON 

Viaggi : TO3 

Pins : 3 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 70 KB

Applicazione : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. 

ECF10N25 PDF Download