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NDB6030L specifiche: Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V

NDB6030L simili

  • NDB6020P
    • P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • NDB6030L
    • Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V
  • NDB603AL
    • N-channel logic level enhancement mode field effect transistor, 30V, 25A
  • NDB6051
    • Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 4 V (D2-Pak) Voltage Vds max 50 V
  • NDB6060L
    • Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 100 W Transistor polarity N Channel Current Id cont. 48 A Voltage Vgs th max. 2 V (D2-Pak) Voltage Vds max 60 V

NDB6030L datasheet e spec

Fabbricante : Fairchild 

Viaggi : TO-263 

Pins : 0 

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 61 KB

Applicazione : Length/Height 4.69 mm Width 10.54 mm Depth 15.49 mm Power dissipation 75 W Transistor polarity N Channel Current Id cont. 52 A Voltage Vgs th max. 3 V (D2-Pak) Voltage Vds max 30 V 

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