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IRC830 specifiche: HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm

IRC830 simili

  • IRC830
    • HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm

IRC830 datasheet e spec

Fabbricante : IR 

Viaggi : TO-220 

Pins : 5 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 244 KB

Applicazione : HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm 

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