IRF3708S specifiche: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A

IRF3708S simili

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- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
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IRF3708S datasheet e spec

Fabbricante : IR

Viaggi : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 151 KB

Applicazione : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12 mOhm, ID = 62A