IRF4905L specifiche: HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A

IRF4905L simili

IRF430
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A
IRF440
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
IRF440
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
IRF440
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A
IRF450
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A
IRF460
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
IRF460
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A
IRF460
- HEXFET transistor thru-hole MOSFET. BVDSS = 500V, RDS(on) = 0.27 Ohm, ID = 21A

IRF4905L datasheet e spec

Fabbricante : IR

Viaggi : TO-262

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 179 KB

Applicazione : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.02 Ohm, ID = -74A