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IRF5210S specifiche: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S simili
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- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
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- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S datasheet e spec
Fabbricante : IR
Viaggi : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 204 KB
Applicazione : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5210S PDF Download