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IRF530N specifiche: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N simili
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
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- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
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- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF530N datasheet e spec
Fabbricante : IR
Viaggi :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 233 KB
Applicazione : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 90 mOhm, ID = 17A
IRF530N PDF Download