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IRF530NS specifiche: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A
IRF530NS simili
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IRF530NS datasheet e spec
Fabbricante : IR
Viaggi : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 195 KB
Applicazione : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.11 Ohm, ID = 17A
IRF530NS PDF Download