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IRF5805 specifiche: HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V
IRF5805 simili
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IRF5805 datasheet e spec
Fabbricante : IR
Viaggi : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 138 KB
Applicazione : HEXFET power MOSFET. VDSS = -30V, RDS(on) = 0.098 Ohm, ID = -3.8A @ VGS = -10V, RDS(on) = 0.165 Ohm, ID = -3.0A @ VGS = -4.5V
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