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IRF5850 specifiche: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm
IRF5850 simili
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IRF5850 datasheet e spec
Fabbricante : IR
Viaggi : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 138 KB
Applicazione : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm
IRF5850 PDF Download