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IRF5852 specifiche: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V
IRF5852 simili
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- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
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- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
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- IRF5210
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IRF5852 datasheet e spec
Fabbricante : IR
Viaggi : TSOP
Pins : 6
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 262 KB
Applicazione : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.090 Ohm, ID = 2.7A @ VGS = 4.5V, RDS(on) = 0.120 Ohm, ID = 2.2A @ VGS = 2.5V
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