IRF7507 specifiche: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm @ N-Ch. VDSS = -20V, RDS (on) = 0.27 Ohm @ P-Ch.

IRF7507 simili

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
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IRF7103QTR
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IRF720
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IRF7204
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IRF7507 datasheet e spec

Fabbricante : IR

Viaggi : Micro8

Pins : 8

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 237 KB

Applicazione : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.135 Ohm @ N-Ch. VDSS = -20V, RDS (on) = 0.27 Ohm @ P-Ch.