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IRF7601 specifiche: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.035 Ohm.
IRF7601 simili
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- N-channel power MOSFET for fast switching applications, 50V, 3A
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- IRF721
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- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7601 datasheet e spec
Fabbricante : IR
Viaggi : Micro8
Pins : 8
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 127 KB
Applicazione : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.035 Ohm.
IRF7601 PDF Download