IRF7811W specifiche: HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 9.0mOhm

IRF7811W simili

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IRF7811W datasheet e spec

Fabbricante : IR

Viaggi : SO

Pins : 8

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 160 KB

Applicazione : HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 9.0mOhm