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IRF9410 specifiche: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.
IRF9410 simili
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- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
- IRF9140
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- IRF9140
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- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9410 datasheet e spec
Fabbricante : IR
Viaggi : SO
Pins : 8
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 125 KB
Applicazione : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.
IRF9410 PDF Download