IRF9610 specifiche: HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A

IRF9610 simili

IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
IRF9140
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IRF9140
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IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9610 datasheet e spec

Fabbricante : IR

Viaggi :

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 177 KB

Applicazione : HEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A