IRF9Z24L specifiche: HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A

IRF9Z24L simili

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- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
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IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z24L datasheet e spec

Fabbricante : IR

Viaggi : TO-262

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 342 KB

Applicazione : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A