IRF9Z24NS specifiche: HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A

IRF9Z24NS simili

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IRF9Z24NS datasheet e spec

Fabbricante : IR

Viaggi : DDPak

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 184 KB

Applicazione : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A