IRF9Z34N specifiche: HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.10 Ohm, ID = -19A

IRF9Z34N simili

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- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z34N datasheet e spec

Fabbricante : IR

Viaggi :

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 118 KB

Applicazione : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.10 Ohm, ID = -19A