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IRFD110 specifiche: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A
IRFD110 simili
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- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.20 Ohm, ID = 1.7A
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- IRFD110
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A
- IRFD120
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IRFD110 datasheet e spec
Fabbricante : IR
Viaggi : HD-1
Pins : 4
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 191 KB
Applicazione : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 1.0 A
IRFD110 PDF Download