IRFI1010N specifiche: HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A

IRFI1010N simili

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IRFI1010N
- HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A
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IRFI3205
- "HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 64 A"
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IRFI1010N datasheet e spec

Fabbricante : IR

Viaggi : TO-220 FULLPAK

Pins : 3

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 119 KB

Applicazione : HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A