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IRFP27N60K specifiche: HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A
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IRFP27N60K datasheet e spec
Fabbricante : IR
Viaggi : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 100 KB
Applicazione : HEXFET power MOSFET. VDSS = 600 V, RDS(on) = 180 mOhm, ID = 27 A
IRFP27N60K PDF Download