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IRFP31N50L specifiche: HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A
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IRFP31N50L datasheet e spec
Fabbricante : IR
Viaggi : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 104 KB
Applicazione : HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.15 Ohm, ID = 31 A
IRFP31N50L PDF Download