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IRFPF50 specifiche: HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A
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IRFPF50 datasheet e spec
Fabbricante : IR
Viaggi : TO-247AC
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 183 KB
Applicazione : HEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A
IRFPF50 PDF Download