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IRFS59N10D specifiche: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
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- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D datasheet e spec
Fabbricante : IR
Viaggi : DDPak
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 151 KB
Applicazione : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D PDF Download