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IRFU220N specifiche: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 600mOhm, ID = 5.0A
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IRFU220N datasheet e spec
Fabbricante : IR
Viaggi : I-PAK
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 145 KB
Applicazione : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 600mOhm, ID = 5.0A
IRFU220N PDF Download